| 摘要 |
PURPOSE:To prevent the damaging of a protective film even after a cutting by forming ohmic electrodes at both end sections of a polycrystalline silicon film grown on an insulating film while attaching a metallic film, which can convert one part of the polycrystalline silicon film into a silicide at a low temperature, to the intermediate section of said polycrystalline silicon film. CONSTITUTION:When currents are flowed between electrodes 4 and 5, a polycrystalline silicon film 2 generates heat by Joule heat. A metallic film 7 and the polycrystalline silicon film 2 react by the heat-generation action, and silicifying is started. Consequently, one part of the polycrystalline silicon film 2 is changed into a metallic silicide 8. When a specific metal is selected as the metallic film at that time, Schottky junctions 9 are formed between the metallic silicide 8 and the polycrystalline silicon film 2. Accordingly, since two Schottky diodes are connected between the electrodes 4 and 5 in the opposite direction, the resistance of a fuse is increased remarkably, and equalized substantially to the state in which the fuse is blown out. |
