| 摘要 |
<p>PURPOSE:To obtain a semiconductor light emission element with a high external quantum efficiency, a high output, a high mass-producibility and a simple manufacturing process by a method wherein the semiconductor light emission element is a surface light emmission type semiconductor element which outputs a light to the direction perpendicular to the main surface of a semiconductor multi-layer film and a high refractive index semiconductor crystal layer which has a light converging function is formed on the light output surface of the element. CONSTITUTION:A P-type InP buffer layer 12, a P-type InGaAsP activation layer 13, an N-type InP cladding layer 14, an undoped InGaAs etching stopper layer 15, an N-type InP layer 16, an undoped InGaAsP etching stopper layer 17 and an N-type InP layer 18 are made to grow on a P-type InP substrate 11 by a liquid phase epitaxial method. After an SiO2 etching mask film 19 is deposited and a recessed part 20 is formed, an In1-xGaxAsyP1-y (wherein x=0.18, y=0.39) buried layer 21 is formed as a high refractive index semiconductor crystal layer and a smooth convex lens surface 22 is formed with methanol bromide. After the etching mask film 19 is removed, an N-type electrode 23 is evaporated and, further, a P-type electrode 24, an SiO2 insulation film 25 and a plated heat sink (PHS) 26 are formed to complete the element.</p> |
