| 摘要 |
PURPOSE:To reduce a metal oxide formed by an oxidization into a metal and form a metal film with few defects by a method wherein a deposited metal, formed into a required electrode and wiring, is subjected to a heat-treatment in an oxidizing atmosphere and again subjected to a heat-treatment in a reduction atmosphere. CONSTITUTION:A silicon oxide film 2 with a prescribed step is formed on a silicon substrate 1 and a W film 3 of a prescribed thickness is deposited on the oxide film 2 by sputtering. A sputtering etching is applied to the film 3 with a photoresist as a mask by reactive sputtering using SF6 gas. At this state, the substrate 1 is subjected to a heat-treatment in an oxidizing atmosphere and a hole 4 in the W film 3 at the stepped part is filled with a volume expansion and an oxide film 5 of W is formed. Then the substrate 1 is subjected to a heat- treatment in a reduction atmosphere of hydrogen gas to which 1ppm to 50% of moisture is added at a prescribed temperature for a prescribed period to reduce the oxide film 5 into the W film 3 again and a metal film with few defects can be obtained. |
