| 摘要 |
PURPOSE:To inhibit the generation of a parasitic MOS transistor, and to increase the degree of integration and the speed of operation by forming a conductive layer on an insulating layer between two active regions formed at an interval on a semiconductor substrate. CONSTITUTION:Reverse conduction type first active region 24 and second active region 25 are formed to one conduction type semiconductor substrate 21 at an interval. One conduction type region 22 having impurity concentration higher than that of the substrate 21 is formed between these regions 24, 25, and an insulator layer 23 is shaped on the region 22. A conductive layer 32 is formed on the layer 23 so as to cover one part of the intermediate section of the regions 24 and 25. The layer 32 in a semiconductor device having the constitution is fixed at potential lower than the threshold value of a parasitic MOS transistor TR. Consequently, the parasitic MOS TR formed by the substrate 21, the region 22, the regions 24, 25 and the layer 32 is not turned ON. Accordingly, the film thickness of the layer 23 is thinned, impurity concentration in the region 22 can be lowered, and the degree of integration can be increased. |
