| 摘要 |
PURPOSE:To obtain the semiconductor device having uniform characteristics and the minimum parasitic resistance by a method wherein the edge of an N<+> active layer is brought close to a gate electrode in the extreme limits and, at the same time, their positional relations are determined in a self-matching manner. CONSTITUTION:SiO2 12 containing Sn is coated on a high resistance GaAs 11, and an Si ion implantation layer 13 is formed through the film 12. An aperture is provided on the SiO2 film 12, a heat treatment is performed, and an N-layer 14 and an N<+> layer 15 are formed. The above is formed thicker than the impurity diffusion length in GaAs by covering Si3N4 thereon, and an Si3N4 film 6 is left on the side face of the SiO2 film 12 by performing an anisotropic etching. At this time, the N<+> layer 15 and the N-layer 14 are partially covered by the film 16. Then, an Al gate electrode 17 is provided, and an ohmic source electrode 18 and a drain electrode 19 are attached to the N<+> layer 15. According to this constitution, as the N<+> active layer 15 and the gate electrode 17 can be brought closer in the utmost limits by controlling the thickness of the second film 16, the parasitic resistance can be reduced to the extreme limits. Also, as the position of the gate electrode and the N<+> active layer can be effectively determined by self- matching, no irregularity in parasitic resistance is generated. |
