发明名称 |
Connection structure between components for semiconductor apparatus. |
摘要 |
<p>A connection structure between lead frames (3) and a base plate (1) of aluminum nitride, to be applied as a connection structure between components of a semiconductor apparatus, comprises the base plate formed of a sintered body of aluminum nitride on which a semiconductor device is to be mounted, the lead frames including, as a main material, iron alloy containing nickel in 29 wt.% and cobalt in 17 wt.%, and silver solder (9) for joining the base plate and the lead frames. A surface of the lead frame to be joined to the base plate is formed of oxygen-free copper of a high plastic deformativity to relieve, by plastic deformation of itself, a thermal stress caused by a difference between a thermal expansion coefficient of the base plate and that of the lead frame in a cooling process at the time of soldering. Preferably, only a portion of each lead frame (3) to be joined to the base plate comprises an inner layer portion of iron alloy containing nickel in 29 wt.% and cobalt in 17 wt.%, and an outer layer portion of oxygen-free copper.</p> |
申请公布号 |
EP0297511(A2) |
申请公布日期 |
1989.01.04 |
申请号 |
EP19880110305 |
申请日期 |
1988.06.28 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES LIMITED |
发明人 |
SASAME, AKIRA C/O ITAMI WORKS OF SUMITOMI;SAKANOUE, HITOYUKI C/O ITAMI WORKS OF SUMITOMI;TEKEUCHI, HISAO C/O ITAMI WORKS OF SUMITOMI;MIYAKE, MASAYA C/O ITAMI WORKS OF SUMITOMI;YAMAKAWA, AKIRA C/O ITAMI WORKS OF SUMITOMI;YUSHIO, SASUHISA C/O ITAMI WORKS OF SUMITOMI;AKAZAWA, HITOSHI C/O ITAMI WORKS OF SUMITOMI |
分类号 |
H01L21/48;H01L23/10;H01L23/495;H01L23/498;H05K1/03;H05K3/24;H05K3/34 |
主分类号 |
H01L21/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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