| 发明名称 |
Semiconductor wafer surface treatment method. |
| 摘要 |
<p>When a surface of semiconductor wafer (13 or 21) is treated for gettering, ultrasonic waves are caused to propagate along the surface of the semiconductor wafer (13 or 21), through pure water. Mechanical damages are formed on the surface of the semiconductor wafer (13 or 21) along which the ultrasonic waves propagated, the damages serving as a back side damage.</p> |
| 申请公布号 |
EP0319806(A1) |
申请公布日期 |
1989.06.14 |
| 申请号 |
EP19880119716 |
申请日期 |
1988.11.25 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA;TOSHIBA MICRO-COMPUTER ENGINEERING CORPORATION |
发明人 |
MIYASHITA, MORIYA C/O PATENT DIVISION;YOSHII, SHINTARO C/O PATENT DIVISION;SAKUMA, KEIKO |
| 分类号 |
H01L21/00;H01L21/304;H01L21/322 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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