发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To decrease remarkably the capacity of terminal and also to quicken a circuit operation by inserting a buffer circuit near a bonding pad so as to eliminate the effect of the capacity of internal wiring. CONSTITUTION:An inverter circuit 7 is added just after each input protection circuit 5 connected respectively to bonding pads 4-1, 4-2, 4-3, 4-5, -, 4-9 for inputting each address signal respectively. The inverter circuit 7 has a depletion transistor (TR) Q3 and an enhancement TRQ4 and the depletion TRQ3 is used as a load TR. In impressing an address signal of a normal level to each bonding pad 4, no protection circuit 5 is activated, the address signal is inputted to an internal signal line 6 via the inverter circuit 7 an also transferred to an address buffer 3. The bonding pad 4 is not connected directly to the internal wiring 6 via the resistor R1 of the input protection circuit 5.
申请公布号 JPS6018894(A) 申请公布日期 1985.01.30
申请号 JP19830125536 申请日期 1983.07.12
申请人 FUJITSU KK 发明人 TAKEMAE YOSHIHIRO
分类号 G11C11/401;G11C11/34;G11C11/408;G11C11/409;(IPC1-7):G11C11/34 主分类号 G11C11/401
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