| 摘要 |
PURPOSE:To obtain a semiconductor laser which can generate a large light output, and has relatively ready manufacture and excellent reliability by disposing an active layer in a striped structure adjacent to a thick guide layer in a groove region. CONSTITUTION:The entire striped region is surrounded by a clad layer 15 of a high resistance layer, a guide layer 16 and a clad layer 17. A current introduced into the striped region at the center with a wider width than a zinc diffused region 19 is not leaked, but effectively introduced into an active layer 12, and contributed to an oscillation. The emitted light is introduced into the narrow width striped region adjacent to the wide width striped region without loss and propagated. Since the layer 12 of the narrow width striped region is adjacent to the layer 16 of the region of a groove 22, the light is introduced and propagated into the guide layer near the both reflecting surfaces. The layer 16 is formed in the shape near a semicircular shape of cross section, the other portion than the flat part of the grown surface is formed in an opticalwaveguide buried with the clad layers 15, 17 having smaller refractive index than the guide layer, and the light is condensed in the guide layer, and propagated. |
