| 摘要 |
The gas feed system disclosed herein is useful in a reactive ion etching system in which a gas plasma is energized by an electrode plate through which the gas is introduced. Propagation of the plasma discharge down the gas feed path is blocked by a feed system in which the space between a pair of porous metal plugs is filled with a porous insulating material having a pore size too small to support discharge, i.e. corresponding to the mean free electron path in the gas.
|
