发明名称 ION IMPLANTATION DEVICE
摘要 PURPOSE:To obtain an ion beam with little beam expansion, uniform energy density, and excellent quality by detecting a fluctuation superimposed on the arc current and automatically controlling the arc discharge condition in an arc chamber. CONSTITUTION:When an arc discharge occurs in an arc chamber 1 provided in the magnetic field due to a source magnet 8, a fluctuation DELTAi of a current noise component due to the plasma oscillation, etc. is superimposed on the current (i). The output voltage R(i+DELTAi) due to the arc current is extracted and the fluctuation can be extracted by feeding the arc current to the output of this arc power supply 2 through a resistor 3. This voltage R(i+DELTAi) is amplified by an amplifier 4 and zone-analyzed with predetermined (n) bandpass filters 5. The badpass filters 5 extract a specific fluctuation with a low frequency determined by ions, a zone-analyzed signal and the arc current (i) are fed to a control calculator 6, and a source magnet power supply 7 is controlled so as to have the energe specttrum for the usage purpose of the ion beam in advance.
申请公布号 JPS6017847(A) 申请公布日期 1985.01.29
申请号 JP19830126709 申请日期 1983.07.12
申请人 NIPPON DENKI KK 发明人 TSUNENARI KINJI
分类号 H01J37/317;H01L21/265;(IPC1-7):H01J37/317 主分类号 H01J37/317
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