| 摘要 |
PURPOSE:To obtain the P-N junction type FET by the reduced number of processes easily by using Pt or Ni for the gate metal which includes the element which will become P type impurity and performs alloying reaction with GaAs to perform the alloying reaction by heating and to promote diffusion of the P type impurity at the same time. CONSTITUTION:An N<+> region 4 is formed on the semi-insulating GaAs substrate 1 by using an insulating film 2 and a photoresist film 3 as the mask and by implantation of Si ions with high doze. Next, the Si ions are implanted with the desired doze to form an active layer 5 of the N type region. Next, annealing is done with high temperature by using an insulating film 6 as a protective film to activate the Si-ion implanted regions 4 and 5. Then AuGe is vapor-deposited followed by sintering to form a source electrode 8 and a drain electrode 9. Next, the Zn 11 which will become P type impurity is vapor-deposited as the first gate metal and the Pt 12 is vapor-deposited as the second gate metal on said Zn 11. Next, sintering is done to perform the alloying reaction of the gate metal 11 and 12 with GaAs thereby forming P-N junction. |
