| 摘要 |
PURPOSE:To check condensation of an Si layer and dissolution of an Si substrate, and to obtain the SOI substrate having the still larger area and the flat surface by a method wherein a heat-resistant radiation heat absorbing film W is provided to intercept radiation to the Si layer, and at the same time, radiation heat from a strip heater is absorbed to be transmitted to the Si layer according to conduction. CONSTITUTION:An oxide film 2 is formed on an Si single crystal substrate 1 according to thermal oxidation, then a polycrystalline Si film 3 and an SiO2 film 4 are adhered in order according to the CVD method, and a metal tungsten film 5 is evaporated moreover according to the sputtering method to be annealed in N2 gas. Then the substrate thereof is put on a lamellar graphite heater 7, and the inside of a quartz tube 9 is filled with high pure N2 gas. Then the prescribed voltage is applied to the heater 6 to perform heating according to turning on electricity. After then, the strip heater 6 is transferred at a constant speed, and the polycrystalline Si layer in the sample is recrystallized. |
