发明名称 |
PROCESS FOR SUPPORTING CATALYST METAL FOR PROMPTING REDUCING REACTION ON PHOTOREACTIVE SEMICONDUCTOR |
摘要 |
PURPOSE:To obtain long life of catalytic activity by forming Pd or Ag on the surface of a photoreactive semiconductor and allowing catalyst metal for prompting reducing reaction to deposit around nuclei of Pd or Ag. CONSTITUTION:A photoreactive semiconductor is dipped in aq. soln. contg. Pd ion or Ag ion and reducing agent for said ion and the impregnated material is reduced thermally to cause deposition of Pd or Ag on the surface. It is further dipped in aq. soln. contg. ion of catalyst metal for prompting reducing reaction and its reducing agent to cause uniform and firm deposition of the catalyst metal for prompting reducing reaction on the surface of the photoreactive semiconductor around Pd or as nuclei. |
申请公布号 |
JPS6014940(A) |
申请公布日期 |
1985.01.25 |
申请号 |
JP19830121775 |
申请日期 |
1983.07.05 |
申请人 |
TOSHIBA KK |
发明人 |
NAKANISHI HIROSHI;SATOU TOMOKO;NAKAYAMA TOSHIO |
分类号 |
B01J19/12;B01J23/44;B01J23/46;B01J23/50;B01J23/62;B01J23/656;B01J23/66;B01J23/68;B01J23/89;B01J35/02;B01J35/06;C07B61/00;(IPC1-7):B01J37/02;B01J23/64 |
主分类号 |
B01J19/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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