| 摘要 |
PURPOSE:To obtain a collector base short type diode, a parasitic effect thereof is inhibited, by bringing a capture region surrounding a base region and an adjacent contact region into ohmic-contact. CONSTITUTION:Capture regions 21 and a contact region 22 are formed on the surface of an island region 13 surrounding a base region 16, an emitter region 17 and a collector contact region 18 shaped to the island region 13 in an epitaxial layer 12 formed on a silicon semiconductor substrate 11, and brought into ohmic- contact by a connecting electrode 23. Since the contact region 22 is formed to a section, potential thereof is the lowest, in the collector region 13, the potential of the capture regions 21 also lowers and holes can be captured effectively, and a parasitic effect can be inhibited effectively. |
