| 摘要 |
PURPOSE:To flatten an epitaxial growth layer without growing a small recessed section by forming an insulating film on the surface of the epitaxial growth layer and executing anisotropic etching such as sputtering etching. CONSTITUTION:An oxide film 2 and a nitride film 11 are formed on a Si substrate 1, an opening is shaped through anisotropic etching, and Si is grown selectively in an epitaxial manner. A semiconductor projection 4 is formed around the opening section, and a polycrystalline Si cluster 5 is grown on the nitride film 11. When an oxide film 12 is formed and high-frequency sputtering etching by Ar ions is executed, a small recessed section 6 on the surface of a selective epitaxial growth layer 3 is not further dug even when there is the recessed section 6 on the surface of the layer 3 because an etching rate on an oblique angle to a surface to be etched of an angle of incidence of an etching medium is larger than that on a right angle to the surface of its angle of incidence. The projection 4 and the cluster 5 are removed, only the clean single crystal epitaxial growth layer 3 can be left, and desired flattening is completed. |
