Method of forming crystal semiconductor film.

摘要

A method of forming a crystal semiconductor film, comprises the steps of; depositing on a substrate surface having a depression, a first material (104) with a higher nucleation density and a smaller mechanical abrasion rate to an abrasive grain to form a layer comprising the first material; depositing on the layer comprising the first material a second material (102) with a lower nucleation density and a greater mechanical abrasion rate to the abrasive grain than the first material to form a layer comprising the second material; forming a nucleation surface (107) by removing a minute part of the layer comprising the second material, at the part of said depression, thereby uncovering the layer comprising the first material to have a sufficiently minute area so as to form only a single nucleus from which said monocrystal is grown by a crystal formation processing; and subjecting the substrate having the nucleation surface thus formed, to a processing for forming a crystal having a greater mechanical abrasion rate to the abrasive grain than the first material so that a monocrystal (110) is made to grow beyond the area of the depression from the nucleus formed on the nucleation surface; and the step of mechanically polishing the grown monocrystal by the use of the abrasive grain to the level corresponding to the surface (112) of the layer comprising the first material so that the monocrystal is flattened.