| 摘要 |
PURPOSE:To enable an optimum pattern exposure according to the thickness of a photo resist film by detecting reflection factor of the photo resist film on the surface of a wafer and setting optimum exposure quantity calculated on the detection results. CONSTITUTION:Light from a light source 3 is illuminated through an optical fiber 10 on a photo resist film on the surface of a wafer 1 ad the reflected light is again reflected to the side by a half-mirror 11 and then detected by a photo detector 12. On the other hand, light from a standard light source 3 is supplied to a standard photo detector 14 through a standard optical fiber 13. The light fom both detectors 12, 14 is inputted in a calculation equipment 16 through an A/D converter 15 and is compared with each other. In the equipment 16, an appropriate exposure quantity for the reflection factor of the wafer 1 is calculated depending on the compared results and the previously obtained data. After the calculation is finished, the signal is sent to a shutter driver 17 and the opening time of shutter 4 is controlled. While the shutter 4 is opened, the pattern exposure of a reticle 9 is carried out by the main body of an exposure device. |
