| 摘要 |
PURPOSE:To improve film forming rate without deterioration of film quality by keeping the inside of reaction chamber at a pressure higher than the normal pressure and forming the CVD film through reaction of reaction gas under such high pressure condition. CONSTITUTION:A wafer 3 is placed on a susceptor 4 in the reaction chamber 1 and a power is applied to the heater 5. Thereby, the wafer 3 is heated. Inside of reaction chamber 1 is placed under the N2 gas ambient and a gas such as SiH4 or O2 is supplied thereto. At this time, the inside of reaction chamber 1 is set to a high temperature exceeding the normal temperature by adequately closing a pressure control valve 15 and reaction is carried out under such condition. In this case, since inside of reaction chamber 1 is set to a pressure higher than the normal pressure, dense film quality is accelerated for the CVD film formed at the surface of wafer 3. Accordingly, it becomes possible to increase the reaction rate as much as the range for acquiring film quality required for the semiconductor device. As a result, improvement in film quality and film forming rate can be realized. |
