发明名称 |
Implanting yttrium and oxygen ions at semiconductor/insulator interface |
摘要 |
A semiconductor device comprising an insulating substrate such as sapphire and a semiconductor element region formed on the substrate, wherein an insulating layer containing yttrium or a lanthanide element is interposed between the substrate and semiconductor element region. A method of manufacturing a semiconductor device such as MOS/SOS wherein yttrium or a lanthanide element is ion implanted into an interface between the substrate and the semiconductor film formed on the substrate to form an insulating layer containing yttrium or a lanthanide element at the interface.
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申请公布号 |
US4494996(A) |
申请公布日期 |
1985.01.22 |
申请号 |
US19830483706 |
申请日期 |
1983.04.11 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
OHNO, JUNICHI;OHTA, TAKAO |
分类号 |
H01L29/78;H01L21/265;H01L21/316;H01L21/762;H01L21/768;H01L21/86;H01L27/12;H01L29/786;(IPC1-7):H01L21/265;H01L7/00 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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