| 摘要 |
PURPOSE:To improve the quality of a film and to obtain the good-quality gas- phase grown film by forming a reactive tube with a double structure and performing suction exhausion from a cell formed by two reactive tubes. CONSTITUTION:On the reactive tube 12 which coats a sample such as a semiconductor wafer 11 with an insulating film and grows it, a reactive tube 13 is provided to form a double reaction tube structure. Several exhaust vents 12' are opened at the bottom of the reaction tube 12 and the both ends of the tube are fixed to the reaction tube 13. The cell 14 designated by the broken line which is formed by the reaction tubes 12 and 13 which stop up the both ends is exhausted by suction by the exhausion system composed of a rotary pump 15 and a check valve 16. consequently, the fine powder interposing or floating in the reaction tube 12 can be removed through the exhaust vents of the reaction tube 12. Thus, the double reaction tube structure which is provided with the fine powder removing mechanism enables the formation of the good-quality gas-phase grown film. |
