| 摘要 |
PURPOSE:To reduce the resistance of a collector-contact, and to improve the degree of integration by boring windows for a base electrode and an emitter electrode while boring a window for a collector electrode to an oxide film and diffusing an emitter while diffusing the collector-contact. CONSTITUTION:A window for diffusing a buried layer is bored to a thin oxide film formed by oxidizing the surface of a P type single crystal silicon substrate, the N<+> type buried layer is formed, and an N type epitaxial layer is grown. A nitride film 10 is formed, and windows are bored to sections, to which oxide films must be shaped, through patterning. Silicon in sections, to which the windows are bored, of the nitride film 10 is oxidized through field oxidation to form oxide films 4. A SiO2 film 5 is grown on the whole surface. Electrode windows are bored through anisotropic dry etching, that is, windows for a base electrode B, an emitter electrode E and a collector electrode C are bored. A resist film 12 is formed on the whole surface and patterned so as to hide the base electrode window, ions such as arsenic ions are implanted through the windows E, C for the emitter electrode and the collector electrode, and an emitter region 8 and a collector contact layer 6 are formed through annealing. |
