| 摘要 |
PURPOSE:To enable to prevent generation of undesirable continuity between adjoining transistors without having a narrow channel effect by a method wherein a polycrystalline silicon thin film is brought into a low resistance state, and an electrode wherein a voltage can be applied from outside is formed in an element isolation region. CONSTITUTION:A silicon substrate 1 is oxidized by heat, a silicon oxide film 8 is formed on the surface, the part whereon an element isolation region will be formed is removed, and the surface of the substrate 1 is exposed. Boron is ion- implanted, an activating heat treatment is performed on the implanted ions, the silicon oxide film is removed, and a silicon nitride film 9 is coated on the whole surface. Subsequently, a silicon thin film 10 is selectively grown at the recessed part only of the substrate, phosphorus is diffused on the whole surface, and the above is brought into a sufficiently low resistance state. Then, the silicon thin film 10 is oxidized by heat, and a silicon oxide film 11 is formed. The silicon nitride film and the silicon oxide film are removed. Subsequently, a silicon thermal oxide film 4 is formed on the substrate 1, and a source diffusion layer and a drain diffusion layer are formed using a gate electrode 5 and another gate electrode as an ion-implantation mask. |
