发明名称 PHOTOETCHING METHOD WITH ELECTRON BEAMS
摘要 PURPOSE:To reduce irradiation amt., to improve roughening of a resist surface after exposure, to simplify processes, and to lower cost by forming a thin electric ally conductive film on a glass substrate, coating it with an electron beam resist, and executing exposure and development. CONSTITUTION:A thin transparent conductive film 11 is formed on a glass substrate 10 by the vapor deposition, sputtering, or the like method, and a photoresist, such as electron beam resist 12, is formed on the film 11 in a proper film thickness by the spin coating method, and solvent is removed by baking. The glass substrate 10 is set to a substrate holder 14 and the electron beam resist 12 is irradiated with electron beams 13 in accordance with a ring band pattern. The resist 12 is developed immediately without removing the film 11 to form a ring band 12a. When the resist 12 is of a positive type, such as, PMMA, the parts irradiated with the beams 13 are dissolved off.
申请公布号 JPS608843(A) 申请公布日期 1985.01.17
申请号 JP19830116071 申请日期 1983.06.29
申请人 PIONEER KK 发明人 SUZUKI SHINICHI;SUEMITSU HISASHI
分类号 G03F7/20;C03C17/00;C03C17/23;G02B3/08;G03C5/00;G03C5/08;G03F7/00;G03F7/11;G03F7/26;(IPC1-7):G03C5/08 主分类号 G03F7/20
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