发明名称 MANUFACTURE OF HIGH WITHSTAND VOLTAGE TRANSISTOR
摘要 PURPOSE:To contrive to simplify the process by a method wherein a mesa etching mask and the breakdown layer of a mesa groove are removed at the same time. CONSTITUTION:A base region 3 of plane junction is formed on a collector region 4, and emitter regions 6 are formed on the base region in plurality by burial. An insulation film 5 is formed on the surface, and electrodes 2 are given to the base region 3 and the emitter regions via apertures of the insulation film 5. The mesa etching mask 1 is formed on this surface, the mesa grooves 7 down to the collector region 4 then being formed in a mechanical manner by means of a dicing saw or wire saw, etc. between the emitter regions 6 from the mask 1. The mask 1 and the mechanic breakdown layer 9 of the grooves 7 are removed at the same time with etchant. Since the bottom of the base region 3 corresponding to each emitter region comes to plane junction to the collector 4, the title device is formed.
申请公布号 JPS604259(A) 申请公布日期 1985.01.10
申请号 JP19830113427 申请日期 1983.06.22
申请人 MATSUSHITA DENKO KK 发明人 IITAKA YUKIO
分类号 H01L29/73;H01L21/331;H01L29/72;H01L29/732;(IPC1-7):H01L29/72 主分类号 H01L29/73
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