| 摘要 |
PURPOSE:To obtain the titled device which enables high speed response by reducing the P-N junction capacitance parasitic in the periphery while preventing the formation of the remote junction in the light emitting part. CONSTITUTION:The device is composed of the first buffer layer 2 epitaxially grown on a semiconductor substrate 1, the second buffer layer 3, an active layer 4, a clad layer 5, an electrode forming layer 6, a current stricture layer 7 including a current injected part 71, and N-side electrode 8 including a light lead-out window 81, a P-side electrode 9, and a Zn diffused region 10. Besides, it acts as a surface light emitting type light emitting diode which takes out light emission from the window 81 by the stricture and injection of current from the part 71 to the layer 4. When the impurity concentration of the second buffer layer 3 is increased in order to prevent the formation of the remote junction in the light emitting part due to Zn diffusion during manufacturing processes, the marked deterioration of the time for response rise in pulse modulation is caused. Therefore, this invention contrives to reduce the P-N junction capacitance parasitic in the periphery due to the transfer of the position of the peripheral P-N junction into the first buffer layer 2 of a low impurity concentration provided under the third buffer layer 3 by peripheral Zn diffusion. |
