| 摘要 |
PURPOSE:To obtain a thin film transistor which does not necessitate a light shielding film by respectively forming source and drain electrodes on the upper and bottom surfaces of an insulating film, and forming a gate insulating film and a gate electrode on the surface of a channel region. CONSTITUTION:A drain 2, an insulating film 17 and a source 3 are sequentially accumulated on the surface of a substrate 1 formed at the surface of an insulator, the end of the drain 2 is brought substantially into coincidence to that of the film 17, and the source 3 is disposed inside from the end of the film 17. A gate insulating film 6 and a gate electrode 4 are formed on the high resistance semiconductor thin film region 5. The channel length is determined by the sum of the distance between the end of the source 3 and the end of the film 17, and the thickness of the film 17. Since the region 5 is formed at the surface side of a gate electrode 4 and at the back side of the first main electrode region 3 to shield the light, the light shielding film is not particularly necessarily provided even if a transparent substrate 1 is used. |
