发明名称 |
Self repairing bulk memory |
摘要 |
A large scale memory system that can use devices with some defective memory cells in them since bad cells and bad devices are recorded in a separate permanent memory that accompanies the system. The permanent memory is continuously referred to so as to avoid defective cells during accessing. Spare devices are automatically incorporated in the system, as needed, to facilitate self repairing.
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申请公布号 |
US4493075(A) |
申请公布日期 |
1985.01.08 |
申请号 |
US19820379202 |
申请日期 |
1982.05.17 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
ANDERSON, JAMES M.;KNIGHT, III, THOMAS S.;KITAGAWA, DENNIS T.;REY, ERNESTO |
分类号 |
G06F12/16;G11C29/00;(IPC1-7):G11C29/00;G06F11/20 |
主分类号 |
G06F12/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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