| 摘要 |
PURPOSE:To obtain the characteristics of a diode of stable withstand voltage by a method wherein the first amorphous Si film is deposited from above a metallic electrode, thereafter the second P type amorphous Si film layer is provided further thereon, and then a transparent electrode is formed by photolithography and chemical etching. CONSTITUTION:The metallic electrode 2 made of chromium, molybdenum, etc., the first photoconductive film 31 made of non doped amorphous Si, the second photoconductive film 32 made of P type amorphous Si doped with a P type impurity, and the clear electrode 4 made of ITO or Sn oxide, etc. are successively laminated on an insulation substrate 1 of pyrex glass or plastic. It is preferable that the film thickness of the P type amophous Si layer 32 is set at 30Angstrom - 3,000Angstrom approximately. Accordingly, the increase of dark current in impressing a high bias voltage is effectively inhibited.
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