| 摘要 |
<p>PURPOSE:To easily transfer semiconductor substrate, prevent damage of it and deterioration of bonding reliability by forming an aperture to a photo resist film and a second protection film and exposing the bonding part of wiring conductor in said aperture with the second protection film used as the mask, after lapping the rear surface of substrate. CONSTITUTION:A wiring conductor 4 consisting of aluminium layer, etc. is formed at the surface of wafer 2. At the surface of such wiring conductor 4, a first protection film 6 consisting of Si3N4 covering said surface and surface of wafer 4 is formed and at the surface of this protection film 6, a second protection film 8 is formed with an oxide film consisting of SiO2 layer. Then, a photo resist layer 10 is formed at the surface of second protection film 8 and the aperture 12 extending to the photo resist layer 10 and second protection film 8 is formed to the pad region. The rear side of wafer 2 is lapped. Thereafter, the first protection film 6 is etched with the second protection film 8 used as the mask and the wiring conductor 4 is exposed in the aperture 12.</p> |
