| 摘要 |
PURPOSE:To obtain a semiconductor device adapted for high speed inexpensively by forming an MESFET on a compound semiconductor epitaxial film formed on a substrate. CONSTITUTION:An InP epitaxial layer 2 is formed on the surface of an Si substrate 1. A source diffused region 3 and a drain diffused region 4 are formed on the layer 2 to surround a field oxidized film 5. A gate electrode 6 is formed on the surface of an InP epitaxial laver, interposed between the source and drain regions 3 and 4. In this manner, the MESFET is formed. Since the compound semiconductor layer is formed in an inexpensive Si substrate in this manner, a semiconductor adapted for high speed can be obtained inexpensively.
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