| 发明名称 |
Process for preparing single crystal. |
| 摘要 |
<p>A process for preparing a single crystal comprising drawing up a single crystal by the Czochralski process and cooling it at a temperature not lower than 600°C at a reduced pressure or in vacuo, by which a single crystal having a dislocation density of 1.5 x 10<Sup>4</Sup>cm<Sup>2</Sup> or less is prepared.</p> |
| 申请公布号 |
EP0128538(A2) |
申请公布日期 |
1984.12.19 |
| 申请号 |
EP19840106519 |
申请日期 |
1984.06.07 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES LIMITED;NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORPORATION |
发明人 |
KAWASAKI, AKIHISA C/O OSAKA WORKS OF SUMITOMO;TADA, KOHJI C/O OSAKA WORKS OF SUMITOMO;KOTANI, TOSHIHIRO C/O OSAKA WORKS OF SUMITOMO;MIYAZAWA, SHINTARO |
| 分类号 |
C30B15/00;C30B15/14;C30B27/02;H01L21/208;(IPC1-7):03B15/14 |
主分类号 |
C30B15/00 |
| 代理机构 |
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代理人 |
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| 地址 |
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