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发明名称
SEMICONDUCTOR DEVICE MANUFACTURE METHOD OF DUAL GATE
摘要
申请公布号
KR100244967(B1)
申请公布日期
2000.02.15
申请号
KR19960072489
申请日期
1996.12.26
申请人
HYUNDAI MICRO ELECTRONICS CO.,LTD.
发明人
YUN, GANG SIG;PAG, HONG BAE;GIM, JONG CHAE
分类号
H01L27/092;H01L21/02;H01L21/8238;(IPC1-7):H01L21/00
主分类号
H01L27/092
代理机构
代理人
主权项
地址
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