发明名称 METHOD FOR FLATTENING INSULATION LAYER
摘要 PURPOSE:To flatten the surface of the title layer having a steep surface form easily with good controllability by using a film made of copolymer containing polysiloxane or siloxane as the film to flatten the surface. CONSTITUTION:A diffused layer 2, an Si oxide film 3, an Al-Si alloy film 4 on an Si substrate 1 are covered with an Si oxide film by LPCVD method. Thereafter, a polyvinylmethylsiloxane film 6 is applied and formed by spin-coating method. Said film 6 becomes fluid on baking at 200 deg.C for 30min, and accordingly its surface turns flat almost completely. Further, the second film 6 is irradiated with far ultraviolet rays and thus hardened. When reactive ion etching is performed with the film mounted on the electrode surface, on the side of impressing a high frequency power, of a vacuum container having the structure of a parallel flat type electrode, each speed of etching the film 6 and an Si oxide film 5 is kept nearly equally, resulting in the extremely high degree of flatness of the oxide film 5.
申请公布号 JPS59225529(A) 申请公布日期 1984.12.18
申请号 JP19830100391 申请日期 1983.06.06
申请人 TOSHIBA KK 发明人 TOUKAWA IWAO;ARIKADO TSUNETOSHI
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/302 主分类号 H01L21/302
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