| 摘要 |
PURPOSE:To form an inclined section shaped window controlled to a multilayer thin-film layer by forming the multilayer thin-film layer having a different etching rate to the main surface of a semiconductor substrate and utilizing the difference of etching rates. CONSTITUTION:A plurality of elements A-C are doped to the main surface of a semiconductor substrate 11 to form thin-film layers. The thin-film layers are grown selectively in an epitaxial manner through annealing. Consequently, thin- films 13a-13c are formed instantaneously on the substrate 11 in response to the magnitude of the segregation coefficients of the impurity elements A-C doped. Accordingly, since etching rates differ according to the impurity elements in the thin-films 13a-13c changed into multilayers, an inclined section shaped window 15 corresponding to the difference of the etching rates of the thin-films 13a-13c can be formed through etching using a pattern 14. |
