| 摘要 |
PURPOSE:To improve the input surge resistance of a semiconductor integrated circuit device, by broadening the area of a P<+> type diffused region. CONSTITUTION:On a P type semiconductor substrate 11, an N<+> type embedded layer 12 with high impurity concentration, an N type epitaxial layer 13, a P<+> type diffused region 14', Schottky barrier diodes 15, and 17, an N<+> type diffused region 16, P<+> type separated diffused regions 18 and 18', and metal layers 19, 20, and 21 are formed. The metal layer 20 becomes an input terminal, which is ohmic-connected with the N<+> type diffused region 16. The metal layer 21 is contacted with the N type layer 13 and forms the Schottky barrier diode 17. An insulating film 22 insulates a semiconductor layer and the metal layers 19, 20, and 21. The length of a P<+> type diffused region 23, which is used as a guard ring for an input clamping diode, is made long, and the area of the region 23 is made large. |
