| 摘要 |
PURPOSE:To decrease the number of manufacturing processes, by masking the gates of an information writing MOSFET after the gates are formed, forming a source and a drain, thereby constituting the offset source and drain. CONSTITUTION:Field oxide films 2 are arranged at a plurality of places in the direction of a diagonal line on the main surface of a P-well region 1, which is formed on an N type semiconductor substrate 20. Gate oxide films 3 are formed thereon. A plurality of polysilicon films 4, which are continued in a wave form in the lateral direction, i.e., gates, are formed thereon. A gate 5 of an NMOSQ1, into which information is written, is covered by a resist film 6. Then, an N<+> type source region 7 and a drain region 8 are formed, and a memory cell Q2 is formed. Then the film 6 is removed. An oxide film 9 and an interlayer insulating film 10 are formed. Contact holes 11 and 12 are formed on the source 7 and the drain 8, and aluminum wirings 13 and 14 are connected to each other. |
