| 摘要 |
PURPOSE:To simplify manufacture while improving the characteristics of several semiconductor laser by forming a groove in depth, through which a semiconductor substrate is exposed, to a substrate crystal, forming semoconductors to both side surfaces, to which an active layer is exposed, of the groove and converting the active layer in the vicinity of the side surfaces of the groove into the same conduction type. CONSTITUTION:An N type GaAs layer 2, an N type Al0.38Ga0.62As layer 3, an Al0.12Ga0.88As active layer 4, an N type Al0.38Ga0.62As layer 5, a P type Al0.5 Ga0.5Aslayer 6 and an N type GaAs layer 7 are formed on a semi-insulating GaAs substrate 1. A groove 8 in depth reaching to the semi-insulating GaAs substrate 1 is formed. A high resistance Al0.5Ga0.5As layer 9, A P type Al0.38Ga0.62As layer 10 and a P type GaAs layer 11 are shaped. Zn, Mg, etc. having a large diffusion constant are used as a dopant for the P type layer 10 at that time. A diffusion front is formed through a solid-phase diffusion during the crystal growth of the dopant, and the active layer 4 in the vicinity of the side surfaces of the groove 8 is changed into a P type. A P electrode 13 is shaped, and the N type GaAs layer is exposed through selective etching while leaving the peripheral section of the groove 8. An N electrode 14 is formed to the N type GaAs layer 2, thus completing the titled array. |
