发明名称 |
HEATING METHOD OF BASE PLATE FOR VAPOR DEPOSITION |
摘要 |
PURPOSE:To eliminate uneven temp. of a large base plate without decreasing much heating efficiency in the stage of performing vapor deposition by heating the base plate and manufacturing a thin film by prohibiting the tight contact between the base plate and a heating element. CONSTITUTION:A base plate 3 of a sapphire C plane which is about one inch square is fixed by means of pins 4 via spacers 2, 2' consisting of four thin stainless steel billets to a heating element 1 attached to a stainless steel plate by winding a heater wire. A base plate 3 is then heated by radiation of the element 1 and the surface of the plate 3 is subjected to reactive sputtering vapor deposition by using a target consisting of oxide of lead.La.Ti. The thin film free from uneven compsn. and film thickness is obtd. by the reactive vapor deposition of the multi-element compd. as mentioned above according to such method. |
申请公布号 |
JPS59222572(A) |
申请公布日期 |
1984.12.14 |
申请号 |
JP19830096307 |
申请日期 |
1983.05.30 |
申请人 |
MATSUSHITA DENKI SANGYO KK |
发明人 |
ADACHI HIDEAKI;OUCHI KENZOU;KAWAGUCHI TAKAO;SETSUNE KENTAROU;WASA KIYOTAKA |
分类号 |
H01L21/31;C23C14/50;C23C14/54;H01L21/203;(IPC1-7):C23C13/00 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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