发明名称 |
VAPOR DEPOSITION SOURCE, METHOD FOR FORMING THIN FILM, AND IMPLANTING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a vapor deposition source for uniformly irradiating a substrate sample with plasma, a method for forming a thin film with the use of the vapor deposition source, and a method for implanting the plasmatized target material into the substrate. SOLUTION: A vacuum vessel 20 has a long target material 1 for generating plasma under an atmosphere of reduced pressure, a trigger electrode 3 for triggering discharge, which is arranged around the target material 1 through the medium of an insulation tube 5, a vapor deposition source 11 having an arc electrode 4 for generating arc discharge 10 initiated by trigger discharge, which is arranged around the long target material 1 through a space. The arc electrode 4 has a spiral body of a coil shape, which makes the target material 1 as a shaft. The substrate 12 is arranged so that the surface 12a to be film formed can face to the opening end of the coil shape.
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申请公布号 |
JP2002327262(A) |
申请公布日期 |
2002.11.15 |
申请号 |
JP20010132192 |
申请日期 |
2001.04.27 |
申请人 |
OLYMPUS OPTICAL CO LTD;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY |
发明人 |
ISOGAWA SEIJI;TOMITANI MANABU;HIDAKA TAKESHI;TOJO HIROMI;HORINO YUJI;CHATANIHARA AKIYOSHI |
分类号 |
C23C14/24;(IPC1-7):C23C14/24 |
主分类号 |
C23C14/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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