发明名称 VAPOR DEPOSITION SOURCE, METHOD FOR FORMING THIN FILM, AND IMPLANTING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a vapor deposition source for uniformly irradiating a substrate sample with plasma, a method for forming a thin film with the use of the vapor deposition source, and a method for implanting the plasmatized target material into the substrate. SOLUTION: A vacuum vessel 20 has a long target material 1 for generating plasma under an atmosphere of reduced pressure, a trigger electrode 3 for triggering discharge, which is arranged around the target material 1 through the medium of an insulation tube 5, a vapor deposition source 11 having an arc electrode 4 for generating arc discharge 10 initiated by trigger discharge, which is arranged around the long target material 1 through a space. The arc electrode 4 has a spiral body of a coil shape, which makes the target material 1 as a shaft. The substrate 12 is arranged so that the surface 12a to be film formed can face to the opening end of the coil shape.
申请公布号 JP2002327262(A) 申请公布日期 2002.11.15
申请号 JP20010132192 申请日期 2001.04.27
申请人 OLYMPUS OPTICAL CO LTD;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 ISOGAWA SEIJI;TOMITANI MANABU;HIDAKA TAKESHI;TOJO HIROMI;HORINO YUJI;CHATANIHARA AKIYOSHI
分类号 C23C14/24;(IPC1-7):C23C14/24 主分类号 C23C14/24
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