| 摘要 |
PURPOSE:To obtain a semiconductor device in which no crack occurs in a passivation film when bonding by forming a bonding pad on not a passivation film but a thermally oxidized film directly, thereby eliminating the influence of a load when bonding directly to the passivation film. CONSTITUTION:A thermally oxidized film 7 of an insulating film is formed on the surface of an N type semiconductor layer 2, an N type semiconductor layer region 2a, a base layer 5, an emitter layer 6 are respectively partly exposed to form a contacting hole at the film 7. Aluminum layers are respectively formed in the holes, and extended on the layer 7 to form wiring layers 8. A passivation film 9 is formed over the formed region of the layer 8, and part of the surface is opened to expose the end 8' of the layer 8. The end 8' is connected with corrosion resistant metal such as a Pt layer 10, and a Ta layer 11 is interposed under the layer 10 so as to strengthen the bondability of the film 9 to the layer 7. An Au layer 13 is formed on the layer 10 extended to the layer 7 to form a bonding pad unit. |
