| 摘要 |
PURPOSE:To suppress greatly a through current and to reduce sufficiently the current of a mean active mode without deteriorating the margin in the read/ write and data holding modes respectively of a static semiconductor memory. CONSTITUTION:The power supply terminals at the GND side of a memory cell 306 on the same bit line are connected in common with each other, and an impedance variable circuit 308 is connected between the GND and common junctures Sj (j=0,1-M-1). The circuit 308 is formed by connecting in parallel n channel transistors Q301-Q303 having Y decoder output Yj (j=0,1-M-1), the chip selection input buffer signal CS and VCC connected to the gate respectively. With use of such circuit 308, the through current of a non-selection bit line can be reduced sufficiently compared with the through current of a selection bit line. Thus it is possible to suppress the through current flowing to a memory cell from the bit line and therefore to reduce satisfactorily the current of a mean active mode. |
