| 摘要 |
PURPOSE:To make the response high-speed and reduce the piercing current by connecting MOSFETs, whose gates are connected to an output terminal and an inverted output terminal respectively, in parallel with another MOSFETs. CONSTITUTION:MOSFETs 58 and 59 are added newly, and then, the FET 58 is turned on and off simultaneously with turn-on and off of an FET 52 because a signal 502 to which an input signal is inverted is connected to the gate of the FET 58, and the FET 59 is turned on and off simultaneously with turn-on and off of an FET 54 because an input signal 501 is connected to the gate of the FET 59. Consequently, drive capabilities of FETs 52 and 54 are improved by connection of FETs 58 and 59, and the speed for switching is enhanced. Potentials of an inverted output terminal 504 and an output terminal 503 are switched quickly by improvement of responsiveness, and FETs 52 and 54 are turned off quickly, and the piercing current is reduced. |
