发明名称 |
A METHOD OF GROWING SILICATE GLASS LAYERS EMPLOYING A CHEMICAL VAPOUR DEPOSITION PROCESS |
摘要 |
Impurity concentration doped in PSG deposited on semiconductor substrates employing chemical vapor deposition process depends on the flow rate of reactive gases in the neighborhood of the first one of the plural semiconductor substrates processed with the same equipment in one batch at the same time. Regulation of the flow rate of the reactive gases in the neighborhood of the first one of the plural semiconductor substrates processed with the same equipment in one batch at the same time is effective to make the impurity concentration doped in PSG uniform for all the semiconductor substrates processed in one batch employing the presently available sealed tube type equipment for vacuum vapor deposition process. The flow rate regulation is possible by monitoring readings of a manometer which is arranged around the inlets thereof and which was calibrated by the flow rate of a nonreactive gas such as nitrogen gas. |
申请公布号 |
DE3069574(D1) |
申请公布日期 |
1984.12.06 |
申请号 |
DE19803069574 |
申请日期 |
1980.12.17 |
申请人 |
FUJITSU LIMITED |
发明人 |
SHIOYA, YOSHIMI;TAKAGI, MIKIO |
分类号 |
C23C16/40;C23C16/455;C30B31/02;H01L21/225;H01L21/316 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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