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发明名称
METHOD OF FORMING A TUNNEL OXIDE FILM IN FLASH MEMORY DEVICE
摘要
申请公布号
KR20060064750(A)
申请公布日期
2006.06.14
申请号
KR20040103384
申请日期
2004.12.09
申请人
HYNIX SEMICONDUCTOR INC.
发明人
DONG, CHA DEOK
分类号
H01L27/115
主分类号
H01L27/115
代理机构
代理人
主权项
地址
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