| 摘要 |
PURPOSE:To obtain a multi-emitter type transistor having excellent switching characteristics by partially forming base contact sections as non-emitter regions in emitter regions and shaping a base electrode including the upper sections of the base contact sections when the emitter regions are dispersed and formed at a plurality of positions in a base region and the multi-emitter type transistor is manufactured. CONSTITUTION:A P type base region 11 is diffused and formed in an N type Si substrate 10 as a collector, and checked N type multi-emitter regions 12 surrounding base contact sections 13 consisting of a plurality of non-emitter regions connected to the region 11 are diffused and shaped in the region 11. The whole surface is coated with an insulating film 15 and window holes 18 are bored, and comb-shaped base electrodes 16n being in contact with the contact sections 12 and a base electrode 16m being in contact directly with the region 11 are applied. Comb-shaped emitter electrodes 17n being in contact with the regions 12 and an emitter electrode 17m extending on the film 15 are applied similarly. Accordingly, a transistor having excellent hFE characteristics and voltage characteristics among the collector and the emitters under the saturated state is obtained. |
