| 摘要 |
<p>PURPOSE:To prevent crossing C fibers from being cut even at the time of hot- pressing by a method wherein an electrode substrate and a heat radiation substrate on which a singularity or a plurality of semiconductors are mounted are composed of Cu-C fiber complex material of Yonago brocade. CONSTITUTION:Ordinate Cu-C fiber bundle can be arranged every 4-8 abscissa bundles in Yonago brocade. In Yonago brocade, the number of cross-points 1 of Cu-C fiber bundles 2 is small while the number of bundles in the ordinate and the abscissa can be the same like in the flat brocade. When the bundles are subjected to the hot-pressing at high temperature under high pressure, as the number of cross-points 1 is small in Yonago brocade, C fibers are rarely cut and thermal conductivity and thermal expansion coefficient are stable. When this textile material is cut into small pieces and used for the semiconductor device, because the number of cut in the C fibers is small, stable Cu-C substrates which have very little dispersion of characteristics can be obtained.</p> |
