发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable the integration of functions of a photo modulator by a method wherein the electrode controlling the following current is arranged on the route for the current between the active region and the electrode of a semiconductor light emitting element. CONSTITUTION:One electrode of a laser, e.g., the P-side electrode is represented by the numeral 31, and the N-side electrodes by the numerals 32 and 33. Control electrodes 37 and 38 are provided on the route for the current reaching said electrodes 32 and 33, respectively. Thereby, the action of field effect transistor is performed for each, thus enabling to construct the photo modulator by means of this semiconductor device.
申请公布号 JPS59213191(A) 申请公布日期 1984.12.03
申请号 JP19830087926 申请日期 1983.05.19
申请人 FUJITSU KK 发明人 KUMAI TSUGIO
分类号 H01L27/15;H01S5/00;H01S5/026;H01S5/042;H01S5/062;(IPC1-7):H01S3/18 主分类号 H01L27/15
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