| 摘要 |
PURPOSE:To prevent induced defects, generating by ion implantation, crossing the junction part of an impurity region by a method wherein two impurity regions are formed by performing an ion implantation separately, and both impurity regions are connected by diffusion. CONSTITUTION:An SiO2 film 102 having an aperture part 103 is formed on the main surface of an N type Si substrate 101. Then, an Si3N4 film 104 is deposited. Subsequently, a resist 105 is formed in the aperture part 103, and an etching is performed on the film 104. Then, after the resist 105 has been removed, a polycrystalline Si 106 is deposited. Said Si 106 is then oxidated, and an SiO2 107 is formed. Subsequently, an etching is performed on the film 107, and an SiO2 film 107' is left on the film 107. Ions are implanted using the films 102, 104 and 107 as a mask, and a graft base region 108 is formed. Then, an SiO2 film 109 is formed. After the film 104 has been removed, an active base region 108 and an emitter region 111 are formed by performing an ion implantation and a heat treatment, and regions 108 and 110 are connected. According to this method of manufacture, induced defects 113 and 114 do not cross the junction surface of the regions 108 and 110. |
