| 摘要 |
PURPOSE:To form a recess of mask alignment mark which can be seen clearly on the surface of semiconductor thin film by providing a ring shaped recess at the surface of semiconductor substrate and forming thereon a semiconductor thin film. CONSTITUTION:A square annular type recess is formed as the mask alignment mark 2a on the surface of semiconductor substrate 1 and a semiconductor thin film 3 is formed thereon. In this case, a recess 4a corresponding to the mask alignment mark 2a is generated at the surface of semiconductor thin film 3. This recess 4a loses the sharpness of the edge and allows such edge to move. But since the annular type mask alignment mark 2a is formed, the pattern of such recess 4a can be seen clearly. Thereby, the recess of mask alignment mark which can be seen clearly can be formed at the surface of semiconductor thin film. |
